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ARUN KUMAR

Pubblicazioni

ARUN KUMAR

Pubblicazioni

 

Arun KUMAR
AREA MIN. 02 - Scienze fisiche
Dipartimento Scienze e Ingegneria della Materia, dell'Ambiente ed Urbanistica
Facolta' di INGEGNERIA

50 pubblicazioni



Anno
Pubblicazioni
2025
Ambipolar conduction in gated tungsten disulphide nanotube
Anno: 2025
 Rivista: NANOSCALE
Autori/autrici: Pelella, Aniello; Camilli, Luca; Giubileo, Filippo; Zak, Alla; Passacantando, Maurizio; Guo, Yao; Intonti, Kimberly; Kumar, Arun; Di Bartolomeo, Antonio
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/338715
Citazioni:
Ambipolar conduction in gated tungsten disulphide nanotube / Pelella, Aniello; Camilli, Luca; Giubileo, Filippo; Zak, Alla; Passacantando, Maurizio; Guo, Yao; Intonti, Kimberly; Kumar, Arun; Di Bartolomeo, Antonio. - In: NANOSCALE. - ISSN 2040-3364. - ELETTRONICO. - 17:4(2025), pp. 2052-2060. [10.1039/d4nr04877f]
Abstract:
Devices based on transition metal dichalcogenide nanotubes hold great potential for electronic and optoelectronic applications. Herein, the electrical transport and photoresponse characteristics of a back-gate device with a channel made of a single tungsten disulfide (WS2) nanotube are investigated ...
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2024
Zinc oxide tetrapods as novel field emitters with low turn-on voltage
Anno: 2024
 Rivista: NANO EXPRESS
Autori/autrici: Giubileo, Filippo; Faella, Enver; Kumar, Arun; De Stefano, Sebastiano; Viscardi, Loredana; Intonti, Kimberly; Durante, Ofelia; Pelella, Aniello; Mazzotti, Adolfo; Martucciello, Nadia; Beliayev, Eugeniy; Mishra, Yogendra Kumar; Passacantando, Maurizio; Di Bartolomeo, Antonio
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/338716
Citazioni:
Zinc oxide tetrapods as novel field emitters with low turn-on voltage / Giubileo, Filippo; Faella, Enver; Kumar, Arun; De Stefano, Sebastiano; Viscardi, Loredana; Intonti, Kimberly; Durante, Ofelia; Pelella, Aniello; Mazzotti, Adolfo; Martucciello, Nadia; Beliayev, Eugeniy; Mishra, Yogendra Kumar; Passacantando, Maurizio; Di Bartolomeo, Antonio. - In: NANO EXPRESS. - ISSN 2632-959X. - ELETTRONICO. - 5:4(2024). [10.1088/2632-959x/ad9c9f]
Abstract:
We investigate the field emission properties of tetrapod-shaped zinc oxide (ZnO) micro and nanostructures prepared using a flame transport synthesis approach. Using a piezo-driven metallic tip as an anode, we performed a local characterization from the apex of a tetrapod arm, where the effective emi...
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2024
Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters
Anno: 2024
 Rivista: NANOSCALE
Autori/autrici: Giubileo, F.; Faella, E.; Capista, D.; Passacantando, M.; Durante, O.; Kumar, A.; Pelella, A.; Intonti, K.; Viscardi, L.; De Stefano, S.; Martucciello, N.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335743
Citazioni:
Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters / Giubileo, F.; Faella, E.; Capista, D.; Passacantando, M.; Durante, O.; Kumar, A.; Pelella, A.; Intonti, K.; Viscardi, L.; De Stefano, S.; Martucciello, N.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.. - In: NANOSCALE. - ISSN 2040-3364. - 16:35(2024), pp. 16718-16728. [10.1039/d4nr02109f]
Abstract:
The field emission properties of rhenium diselenide (ReSe2) nanosheets on Si/SiO2 substrates, obtained through mechanical exfoliation, have been investigated. The n-type conduction was confirmed by using nano-manipulated tungsten probes inside a scanning electrode microscope to directly contact the ...
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2024
Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions
Anno: 2024
 Rivista: ACS APPLIED MATERIALS & INTERFACES
Autori/autrici: Anter, A.; Orhan, E.; Ulusoy, M.; Polat, B.; Yildiz, M.; Kumar, A.; Di Bartolomeo, A.; Faella, E.; Passacantando, M.; Bi, J.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335747
Citazioni:
Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions / Anter, A.; Orhan, E.; Ulusoy, M.; Polat, B.; Yildiz, M.; Kumar, A.; Di Bartolomeo, A.; Faella, E.; Passacantando, M.; Bi, J.. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 16:17(2024), pp. 22421-22432. [10.1021/acsami.4c02102]
Abstract:
Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) are used as a dopant of polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dot...
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2024
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications
Anno: 2024
 Rivista: SMALL
Autori/autrici: Pelella, Aniello; Kumar, Arun; Intonti, Kimberly; Durante, Ofelia; De Stefano, Sebastiano; Han, Xinyi; Li, Zhonggui; Guo, Yao; Giubileo, Filippo; Camilli, Luca; Passacantando, Maurizio; Zak, Alla; Di Bartolomeo, Antonio
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335732
Citazioni:
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications / Pelella, Aniello; Kumar, Arun; Intonti, Kimberly; Durante, Ofelia; De Stefano, Sebastiano; Han, Xinyi; Li, Zhonggui; Guo, Yao; Giubileo, Filippo; Camilli, Luca; Passacantando, Maurizio; Zak, Alla; Di Bartolomeo, Antonio. - In: SMALL. - ISSN 1613-6829. - 20:44(2024). [10.1002/smll.202403965]
Abstract:
Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibi...
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2024
n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory
Anno: 2024
 Rivista: ADVANCED ELECTRONIC MATERIALS
Autori/autrici: Kumar, A.; Pelella, A.; Intonti, K.; Viscardi, L.; Durante, O.; Giubileo, F.; Romano, P.; Neill, H.; Patil, V.; Ansari, L.; Hurley, P. K.; Gity, F.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335751
Citazioni:
n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory / Kumar, A.; Pelella, A.; Intonti, K.; Viscardi, L.; Durante, O.; Giubileo, F.; Romano, P.; Neill, H.; Patil, V.; Ansari, L.; Hurley, P. K.; Gity, F.; Di Bartolomeo, A.. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 10:8(2024). [10.1002/aelm.202400010]
Abstract:
The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n-type c...
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2024
Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors
Anno: 2024
 Rivista: MATERIALS HORIZONS
Autori/autrici: Kumar, A.; Intonti, K.; Viscardi, L.; Durante, O.; Pelella, A.; Kharsah, O.; Sleziona, S.; Giubileo, F.; Martucciello, N.; Ciambelli, P.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335766
Citazioni:
Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors / Kumar, A.; Intonti, K.; Viscardi, L.; Durante, O.; Pelella, A.; Kharsah, O.; Sleziona, S.; Giubileo, F.; Martucciello, N.; Ciambelli, P.; Schleberger, M.; Di Bartolomeo, A.. - In: MATERIALS HORIZONS. - ISSN 2051-6347. - 11:10(2024), pp. 2397-2405. [10.1039/d4mh00027g]
Abstract:
Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V−1 s−1 and a memory window up to 1.3 μA. Exposure to a superconti...
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2024
Focus on synthesis, characterization and applications of low dimensional nanomaterials
Anno: 2024
 Rivista: NANO EXPRESS
Autori/autrici: Kumar, Arun; Kumar, Pramod; Di Bartolomeo, Antonio
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/338714
Citazioni:
Focus on synthesis, characterization and applications of low dimensional nanomaterials / Kumar, Arun; Kumar, Pramod; Di Bartolomeo, Antonio. - In: NANO EXPRESS. - ISSN 2632-959X. - ELETTRONICO. - 5:4(2024). [10.1088/2632-959x/ad8c70]
Abstract:
This Editorial summarizes the content of a focus collection on the synthesis, characterization and applications of low dimensional materials. The collection groups original research and review articles providing recent results and prospects in the field, with particular attention on optoelectronic a...
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2024
Multilayer WS2 for low-power visible and near-infrared phototransistors
Anno: 2024
 Rivista: DISCOVER NANO
Autori/autrici: Pelella, Aniello; Intonti, Kimberly; Durante, Ofelia; Kumar, Arun; Viscardi, Loredana; De Stefano, Sebastiano; Romano, Paola; Giubileo, Filippo; Neill, Hazel; Patil, Vilas; Ansari, Lida; Roycroft, Brendan; Hurley, Paul K.; Gity, Farzan; Di Bartolomeo, Antonio
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335812
Citazioni:
Multilayer WS2 for low-power visible and near-infrared phototransistors / Pelella, Aniello; Intonti, Kimberly; Durante, Ofelia; Kumar, Arun; Viscardi, Loredana; De Stefano, Sebastiano; Romano, Paola; Giubileo, Filippo; Neill, Hazel; Patil, Vilas; Ansari, Lida; Roycroft, Brendan; Hurley, Paul K.; Gity, Farzan; Di Bartolomeo, Antonio. - In: DISCOVER NANO. - ISSN 2731-9229. - 19:1(2024). [10.1186/s11671-024-04000-0]
Abstract:
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly d...
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2024
Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures
Anno: 2024
 Rivista: SURFACES AND INTERFACES
Autori/autrici: Viscardi, L.; Durante, O.; De Stefano, S.; Intonti, K.; Kumar, A.; Pelella, A.; Giubileo, F.; Kharsah, O.; Daniel, L.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335758
Citazioni:
Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures / Viscardi, L.; Durante, O.; De Stefano, S.; Intonti, K.; Kumar, A.; Pelella, A.; Giubileo, F.; Kharsah, O.; Daniel, L.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.. - In: SURFACES AND INTERFACES. - ISSN 2468-0230. - 49:(2024). [10.1016/j.surfin.2024.104445]
Abstract:
In recent years, van der Waals heterojunctions between two-dimensional (2D) materials have garnered significant attention for their unique electronic and optoelectronic properties and have opened avenues for innovative device architectures and applications. Among them, the heterojunction formed by b...
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2023
Pressure-dependent photoconductivity in two dimensional ReS2
Anno: 2023
 Autori/autrici: Intonti, K.; Faella, E.; Kumar, A.; Viscardi, L.; Giubileo, F.; Lam, H. T.; Anastasiou, K.; Craciun, M.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 4.1 Contributo in Atti di convegno
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335776
Citazioni:
Pressure-dependent photoconductivity in two dimensional ReS2 / Intonti, K.; Faella, E.; Kumar, A.; Viscardi, L.; Giubileo, F.; Lam, H. T.; Anastasiou, K.; Craciun, M.; Russo, S.; Di Bartolomeo, A.. - (2023), pp. 368-372. (Intervento presentato al convegno IEEE NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference (NMDC) tenutosi a Paestum, Italy nel 22-25 Ottobre 2023) [10.1109/NMDC57951.2023.10343870].
Abstract:
Two-dimensional materials are very sensitive to the surrounding environment because of their high surface-to-volume ratio. Herein, we investigated the electrical properties of few-layer ReS2 back-gated field effect transistors at different pressures. The lowering pressure increases the conductivity ...
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2023
Effect of PMMA capping layer on black phosphorus field effect transistor
Anno: 2023
 Autori/autrici: Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Durante, O.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 4.1 Contributo in Atti di convegno
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335742
Citazioni:
Effect of PMMA capping layer on black phosphorus field effect transistor / Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Durante, O.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.. - (2023), pp. 77-80. (Intervento presentato al convegno IEEE NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference (NMDC) tenutosi a Paestum, Italy nel 22-25 Ottobre 2023) [10.1109/NMDC57951.2023.10343929].
Abstract:
We report the electrical characterizations of multi-layer black phosphorus (BP)-based field-effect transistor (FET) capped and uncapped with a PMMA film. The PMMA capping film affects contact behavior and channel resistance. Further, the output characteristics show asymmetric and symmetric behavior ...
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2023
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS2 field-effect transistor
Anno: 2023
 Autori/autrici: De Stefano, S.; Durante, O.; Giubileo, F.; Faella, E.; Intonti, K.; Kumar, A.; Viscardi, L.; Craciun, M.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 4.1 Contributo in Atti di convegno
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335738
Citazioni:
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS2 field-effect transistor / De Stefano, S.; Durante, O.; Giubileo, F.; Faella, E.; Intonti, K.; Kumar, A.; Viscardi, L.; Craciun, M.; Russo, S.; Di Bartolomeo, A.. - (2023), pp. 339-340. (Intervento presentato al convegno IEEE NMDC 2023 - IEEE Nanotechnology Materials and Devices Conference (NMDC) tenutosi a Paestum, Italy nel 22-25 Ottobre 2023) [10.1109/NMDC57951.2023.10343986].
Abstract:
This work focuses on the investigation of a peculiar phenomenon observed in the transfer characteristic of field-effect transistors (FETs) based on two-dimensional Rhenium disulfide (ReS2). This phenomenon entails a step-like feature that leads to an increase of the drain current as the gate voltage...
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2023
Large-Scale Production and Optical Properties of a High-Quality SnS2 Single Crystal Grown Using the Chemical Vapor Transportation Method
Anno: 2023
 Rivista: CRYSTALS
Autori/autrici: Tripathi, P.; Kumar, A.; Bankar, P. K.; Singh, K.; Gupta, B. K.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335761
Citazioni:
Large-Scale Production and Optical Properties of a High-Quality SnS2 Single Crystal Grown Using the Chemical Vapor Transportation Method / Tripathi, P.; Kumar, A.; Bankar, P. K.; Singh, K.; Gupta, B. K.. - In: CRYSTALS. - ISSN 2073-4352. - 13:7(2023). [10.3390/cryst13071131]
Abstract:
The scientific community believes that high-quality, bulk layered, semiconducting single crystals are crucial for producing two-dimensional (2D) nanosheets. This has a significant impact on current cutting-edge science in the development of next-generation electrical and optoelectronic devices. To m...
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2023
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2
Anno: 2023
 Rivista: ACS APPLIED MATERIALS & INTERFACES
Autori/autrici: Intonti, K.; Faella, E.; Kumar, A.; Viscardi, L.; Giubileo, F.; Martucciello, N.; Lam, H. T.; Anastasiou, K.; Craciun, M.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335735
Citazioni:
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2 / Intonti, K.; Faella, E.; Kumar, A.; Viscardi, L.; Giubileo, F.; Martucciello, N.; Lam, H. T.; Anastasiou, K.; Craciun, M.; Russo, S.; Di Bartolomeo, A.. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 15:43(2023), pp. 50302-50311. [10.1021/acsami.3c12973]
Abstract:
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FE...
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2023
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting
Anno: 2023
 Rivista: APPLIED PHYSICS LETTERS
Autori/autrici: Li, X.; Wan, Z.; Zhang, Y.; Zhang, Y.; Hu, Y.; Yue, Z.; Kumar, A.; Cecchini, R.; Longo, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335745
Citazioni:
High-performance photothermal effect in MOCVD grown topological insulator Sb2Te3 nanograting / Li, X.; Wan, Z.; Zhang, Y.; Zhang, Y.; Hu, Y.; Yue, Z.; Kumar, A.; Cecchini, R.; Longo, M.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 123:16(2023). [10.1063/5.0166420]
Abstract:
Photothermal energy has been widely used in high-tech applications, such as heating/cooling systems, bio-imaging, bio-sensing, and medical therapies. However, conventional photothermal materials have narrow photo-absorption bandwidth and low photothermal conversion efficiency. Innovative materials t...
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2023
Black phosphorus unipolar transistor, memory, and photodetector
Anno: 2023
 Rivista: JOURNAL OF MATERIALS SCIENCE
Autori/autrici: Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335757
Citazioni:
Black phosphorus unipolar transistor, memory, and photodetector / Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.. - In: JOURNAL OF MATERIALS SCIENCE. - ISSN 0022-2461. - 58:6(2023), pp. 2689-2699. [10.1007/s10853-023-08169-0]
Abstract:
We report the fabrication, electrical, and optical characterizations of few-layered black phosphorus (BP)-based field-effect transistor (FET). The fabricated device exhibits a p-type transport with hole mobility up to 175 cm2 V−1 s−1 at Vds = 1 mV. The transfer characteristics show a large h...
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2023
Hysteresis and Photoconductivity of Few-Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure
Anno: 2023
 Rivista: ADVANCED ELECTRONIC MATERIALS
Autori/autrici: Intonti, K.; Faella, E.; Viscardi, L.; Kumar, A.; Durante, O.; Giubileo, F.; Passacantando, M.; Lam, H. T.; Anastasiou, K.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335764
Citazioni:
Hysteresis and Photoconductivity of Few-Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure / Intonti, K.; Faella, E.; Viscardi, L.; Kumar, A.; Durante, O.; Giubileo, F.; Passacantando, M.; Lam, H. T.; Anastasiou, K.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 9:8(2023). [10.1002/aelm.202300066]
Abstract:
This study reports the optoelectronic characterization of few-layer ReSe2field effect transistors at different pressures. The output curves reveal dominant n-type behavior and a low Schottky barrier at the metal contacts. The transfer curves show a significant hysteresis that can be exploited in mem...
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2023
Temperature dependent black phosphorus transistor and memory
Anno: 2023
 Rivista: NANO EXPRESS
Autori/autrici: Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335770
Citazioni:
Temperature dependent black phosphorus transistor and memory / Kumar, A.; Viscardi, L.; Faella, E.; Giubileo, F.; Intonti, K.; Pelella, A.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.. - In: NANO EXPRESS. - ISSN 2632-959X. - 4:1(2023). [10.1088/2632-959X/acbe11]
Abstract:
We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the ga...
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2023
Optoelectronic memory in 2D MoS2 field effect transistor
Anno: 2023
 Rivista: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Autori/autrici: Kumar, A.; Faella, E.; Durante, O.; Giubileo, F.; Pelella, A.; Viscardi, L.; Intonti, K.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335769
Citazioni:
Optoelectronic memory in 2D MoS2 field effect transistor / Kumar, A.; Faella, E.; Durante, O.; Giubileo, F.; Pelella, A.; Viscardi, L.; Intonti, K.; Sleziona, S.; Schleberger, M.; Di Bartolomeo, A.. - In: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS. - ISSN 0022-3697. - 179:(2023). [10.1016/j.jpcs.2023.111406]
Abstract:
2D layered materials with their tunable bandgap and unique crystal structures are excellent candidates for 2D optoelectronic memories. In this work, we present a simple approach for the realization of a nonvolatile optoelectronic memory device based on a MoS2 transistor with light induced charge sto...
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2023
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures
Anno: 2023
 Rivista: ACS APPLIED NANO MATERIALS
Autori/autrici: Durante, O.; Intonti, K.; Viscardi, L.; De Stefano, S.; Faella, E.; Kumar, A.; Pelella, A.; Romeo, F.; Giubileo, F.; Alghamdi, M. S. G.; Alshehri, M. A. S.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335765
Citazioni:
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures / Durante, O.; Intonti, K.; Viscardi, L.; De Stefano, S.; Faella, E.; Kumar, A.; Pelella, A.; Romeo, F.; Giubileo, F.; Alghamdi, M. S. G.; Alshehri, M. A. S.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.. - In: ACS APPLIED NANO MATERIALS. - ISSN 2574-0970. - 6:23(2023), pp. 21663-21670. [10.1021/acsanm.3c03685]
Abstract:
Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold cu...
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2023
Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts
Anno: 2023
 Rivista: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Autori/autrici: Viscardi, L.; Intonti, K.; Kumar, A.; Faella, E.; Pelella, A.; Giubileo, F.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335775
Citazioni:
Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts / Viscardi, L.; Intonti, K.; Kumar, A.; Faella, E.; Pelella, A.; Giubileo, F.; Sleziona, S.; Kharsah, O.; Schleberger, M.; Di Bartolomeo, A.. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - 260:9(2023). [10.1002/pssb.202200537]
Abstract:
Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)-based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p-type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The...
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2023
Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis
Anno: 2023
 Rivista: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Autori/autrici: Verma, S. K.; Sharma, S.; Maurya, G. K.; Gautam, V.; Singh, R.; Singh, A.; Kandpal, K.; Kumar, P.; Kumar, A.; Wiemer, C.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335750
Citazioni:
Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis / Verma, S. K.; Sharma, S.; Maurya, G. K.; Gautam, V.; Singh, R.; Singh, A.; Kandpal, K.; Kumar, P.; Kumar, A.; Wiemer, C.. - In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. - ISSN 1463-9076. - 25:36(2023), pp. 25008-25017. [10.1039/d3cp03610c]
Abstract:
Topological insulators have emerged as one of the most promising candidates for the fabrication of novel electronic and optoelectronic devices due to the unique properties of nontrivial Dirac cones on the surface and a narrow bandgap in the bulk. In this work, the Sb2Te3 and Bi2Te2Se materials, and ...
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2023
Temperature-dependent photoconductivity in two-dimensional MoS2 transistors
Anno: 2023
 Rivista: MATERIALS TODAY NANO
Autori/autrici: Di Bartolomeo, A.; Kumar, A.; Durante, O.; Sessa, A.; Faella, E.; Viscardi, L.; Intonti, K.; Giubileo, F.; Martucciello, N.; Romano, P.; Sleziona, S.; Schleberger, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335773
Citazioni:
Temperature-dependent photoconductivity in two-dimensional MoS2 transistors / Di Bartolomeo, A.; Kumar, A.; Durante, O.; Sessa, A.; Faella, E.; Viscardi, L.; Intonti, K.; Giubileo, F.; Martucciello, N.; Romano, P.; Sleziona, S.; Schleberger, M.. - In: MATERIALS TODAY NANO. - ISSN 2588-8420. - 24:(2023). [10.1016/j.mtnano.2023.100382]
Abstract:
The photoconductivity in monolayer MoS2 back-gate transistors is studied as a function of temperature and pressure. The photocurrent increases linearly with the light intensity up to a maximum responsivity of ∼30 A/W in air. Time-resolved photocurrent measurements confirm that the photoresponse is...
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2022
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires
Anno: 2022
 Rivista: NANOMATERIALS
Autori/autrici: Kumar, A.; Mirshokraee, S. A.; Lamperti, A.; Cantoni, M.; Longo, M.; Wiemer, C.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335763
Citazioni:
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires / Kumar, A.; Mirshokraee, S. A.; Lamperti, A.; Cantoni, M.; Longo, M.; Wiemer, C.. - In: NANOMATERIALS. - ISSN 2079-4991. - 12:10(2022). [10.3390/nano12101623]
Abstract:
Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2 Te3 shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical...
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2022
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light
Anno: 2022
 Rivista: NANOMATERIALS
Autori/autrici: Faella, E.; Intonti, K.; Viscardi, L.; Giubileo, F.; Kumar, A.; Lam, H. T.; Anastasiou, K.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335771
Citazioni:
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light / Faella, E.; Intonti, K.; Viscardi, L.; Giubileo, F.; Kumar, A.; Lam, H. T.; Anastasiou, K.; Craciun, M. F.; Russo, S.; Di Bartolomeo, A.. - In: NANOMATERIALS. - ISSN 2079-4991. - 12:11(2022). [10.3390/nano12111886]
Abstract:
We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show that the optoelectronic performance of these FETs is ...
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2022
SnO2 Nanofibers Network for Cold Cathode Applications in Vacuum Nanoelectronics
Anno: 2022
 Rivista: ADVANCED ELECTRONIC MATERIALS
Autori/autrici: Giubileo, F.; Faella, E.; Pelella, A.; Kumar, A.; Capista, D.; Passacantando, M.; Kim, S. S.; Di Bartolomeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335762
Citazioni:
SnO2 Nanofibers Network for Cold Cathode Applications in Vacuum Nanoelectronics / Giubileo, F.; Faella, E.; Pelella, A.; Kumar, A.; Capista, D.; Passacantando, M.; Kim, S. S.; Di Bartolomeo, A.. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 8:10(2022). [10.1002/aelm.202200237]
Abstract:
Field-emission cold cathodes are the key components of vacuum nanoelectronics that offer great advantages over other electron sources based on the thermionic or photoelectric effects. In the effort to realize new electron sources, a systematic investigation of the field emission (FE) properties of S...
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2022
Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate
Anno: 2022
 Rivista: IEEE TRANSACTIONS ON ELECTRON DEVICES
Autori/autrici: Verma, S. K.; Kandpal, K.; Kumar, P.; Kumar, A.; Wiemer, C.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335739
Citazioni:
Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate / Verma, S. K.; Kandpal, K.; Kumar, P.; Kumar, A.; Wiemer, C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 69:8(2022), pp. 4342-4348. [10.1109/TED.2022.3181534]
Abstract:
— In this work, we report the photodetector properties of a vertically stacked heterostructure based on topological insulator Sb2Te3/n-Si. The high-quality Sb2Te3 thin films were grown on an n-Si substrate by the metal–organic chemical vapor deposition (MOCVD) technique. The fabricated Sb2Te3/n-...
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2022
Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates
Anno: 2022
 Rivista: SCIENTIFIC REPORTS
Autori/autrici: Locatelli, L.; Kumar, A.; Tsipas, P.; Dimoulas, A.; Longo, E.; Mantovan, R.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335759
Citazioni:
Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates / Locatelli, L.; Kumar, A.; Tsipas, P.; Dimoulas, A.; Longo, E.; Mantovan, R.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 12:1(2022). [10.1038/s41598-022-07496-7]
Abstract:
Recently, the topological insulators (TIs) antimony telluride (Sb2Te3) and bismuth telluride (Bi2Te3) are attracting high interest for applications based on spin-charge interconversion mechanisms. Aiming to make a step toward the technology transfer, it is of major importance to achieve and investig...
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2021
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
Anno: 2021
 Rivista: CRYSTAL GROWTH & DESIGN
Autori/autrici: Kumar, A.; Cecchini, R.; Locatelli, L.; Wiemer, C.; Martella, C.; Nasi, L.; Lazzarini, L.; Mantovan, R.; Longo, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335756
Citazioni:
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111) / Kumar, A.; Cecchini, R.; Locatelli, L.; Wiemer, C.; Martella, C.; Nasi, L.; Lazzarini, L.; Mantovan, R.; Longo, M.. - In: CRYSTAL GROWTH & DESIGN. - ISSN 1528-7483. - 21:7(2021), pp. 4023-4029. [10.1021/acs.cgd.1c00328]
Abstract:
Bi2Te3 is attracting a renewed interest due to its topological insulator properties; however, even using advanced physical and chemical deposition techniques, the growth of high crystal quality layers on substrates allowing its technological employment, such as Si, is very challenging due to the str...
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2021
Thermal annealing and phase transformation of serpentine-like garnierite
Anno: 2021
 Rivista: MINERALS
Autori/autrici: Kumar, A.; Cassetta, M.; Giarola, M.; Zanatta, M.; Guen, M. L.; Soraru, G. D.; Mariotto, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335736
Citazioni:
Thermal annealing and phase transformation of serpentine-like garnierite / Kumar, A.; Cassetta, M.; Giarola, M.; Zanatta, M.; Guen, M. L.; Soraru, G. D.; Mariotto, G.. - In: MINERALS. - ISSN 2075-163X. - 11:2(2021), pp. 188.1-188.9. [10.3390/min11020188]
Abstract:
This study is focused on the vibrational and microstructural aspects of the thermally induced transformation of serpentine-like garnierite into quartz, forsterite, and enstatite occurring at about 620 °C. Powder specimens of garnierite were annealed in static air between room temperature and 1000 ...
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2021
Natural Materials—Interesting Candidates for Carbon Nanomaterials
Anno: 2021
 Rivista: PHYSCHEM
Autori/autrici: Kumar, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335760
Citazioni:
Natural Materials—Interesting Candidates for Carbon Nanomaterials / Kumar, A.. - In: PHYSCHEM. - ISSN 2673-7167. - 1:1(2021), pp. 4-25. [10.3390/physchem1010002]
Abstract:
This review sums up the techniques used for the synthesis of carbon nanotubes (CNTs), carbon nanofibers (CNFs), and carbon nanospheres (CNSs) by employing catalysts of natural origin. Establishing large-scale production and commercial applications of CNTs for a sustainable society is still of high a...
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2021
Phase change Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires by metal organic chemical vapor deposition
Anno: 2021
 Rivista: NANOMATERIALS
Autori/autrici: Kumar, A.; Cecchini, R.; Wiemer, C.; Mussi, V.; De Simone, S.; Calarco, R.; Scuderi, M.; Nicotra, G.; Longo, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335774
Citazioni:
Phase change Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires by metal organic chemical vapor deposition / Kumar, A.; Cecchini, R.; Wiemer, C.; Mussi, V.; De Simone, S.; Calarco, R.; Scuderi, M.; Nicotra, G.; Longo, M.. - In: NANOMATERIALS. - ISSN 2079-4991. - 11:12(2021). [10.3390/nano11123358]
Abstract:
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical...
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2021
MOCVD growth of GeTe/Sb2Te3 core–shell nanowires
Anno: 2021
 Rivista: COATINGS
Autori/autrici: Kumar, A.; Cecchini, R.; Wiemer, C.; Mussi, V.; De Simone, S.; Calarco, R.; Scuderi, M.; Nicotra, G.; Longo, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335755
Citazioni:
MOCVD growth of GeTe/Sb2Te3 core–shell nanowires / Kumar, A.; Cecchini, R.; Wiemer, C.; Mussi, V.; De Simone, S.; Calarco, R.; Scuderi, M.; Nicotra, G.; Longo, M.. - In: COATINGS. - ISSN 2079-6412. - 11:6(2021). [10.3390/coatings11060718]
Abstract:
We report the self-assembly of core–shell GeTe/Sb2 Te3 nanowires (NWs) on Si (100), and SiO2 /Si substrates by metalorganic chemical vapour deposition, coupled to the vapour–liquid– solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman map...
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2021
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance
Anno: 2021
 Rivista: ADVANCED MATERIALS INTERFACES
Autori/autrici: Longo, E.; Locatelli, L.; Belli, M.; Alia, M.; Kumar, A.; Longo, M.; Fanciulli, M.; Mantovan, R.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335744
Citazioni:
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance / Longo, E.; Locatelli, L.; Belli, M.; Alia, M.; Kumar, A.; Longo, M.; Fanciulli, M.; Mantovan, R.. - In: ADVANCED MATERIALS INTERFACES. - ISSN 2196-7350. - 8:23(2021). [10.1002/admi.202101244]
Abstract:
Large-area antimony telluride (Sb2Te3) thin films are grown by a metal organic chemical vapor deposition technique on 4” Si(111) substrates, and their topological character probed by magnetoconductance measurements. When interfaced with Fe thin films, broadband ferromagnetic resonance spectroscopy...
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2021
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films
Anno: 2021
 Rivista: JOURNAL OF PHYSICAL CHEMISTRY. C
Autori/autrici: Kumar, A.; Kumar, V.; Romeo, A.; Wiemer, C.; Mariotto, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335737
Citazioni:
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films / Kumar, A.; Kumar, V.; Romeo, A.; Wiemer, C.; Mariotto, G.. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - 125:36(2021), pp. 19858-19865. [10.1021/acs.jpcc.1c05047]
Abstract:
Sb2Se3 thin films have received increasing interest for their applications in optoelectronics. However, technological intervention demands a material-specific understanding of the reactivity to different environments. Both thermal annealing and laser irradiation carried out in an ambient atmosphere ...
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2019
Effects of post-deposition annealing and copper inclusion in superstrate Sb2Se3 based solar cells by thermal evaporation
Anno: 2019
 Rivista: SOLAR ENERGY
Autori/autrici: Kumar, V.; Artegiani, E.; Kumar, A.; Mariotto, G.; Piccinelli, F.; Romeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335734
Citazioni:
Effects of post-deposition annealing and copper inclusion in superstrate Sb2Se3 based solar cells by thermal evaporation / Kumar, V.; Artegiani, E.; Kumar, A.; Mariotto, G.; Piccinelli, F.; Romeo, A.. - In: SOLAR ENERGY. - ISSN 0038-092X. - 193:(2019), pp. 452-457. [10.1016/j.solener.2019.09.069]
Abstract:
Earth-abundancy, nontoxic constituent, along with excellent stability and optoelectronic properties make antimony selenide (Sb2Se3) one of the potential candidate for low cost photovoltaics. In this work, antimony selenide (Sb2Se3) thin films were prepared by low temperature thermal evaporation meth...
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2019
Raman Open Database: first interconnected Raman–X-ray diffraction open-access resource for material identification
Anno: 2019
 Rivista: JOURNAL OF APPLIED CRYSTALLOGRAPHY
Autori/autrici: El Mendili, Y.; Vaitkus, A.; Merkys, A.; Grazulis, S.; Chateigner, D.; Mathevet, F.; Gascoin, S.; Petit, S.; Bardeau, J. -F.; Zanatta, M.; Secchi, M.; Mariotto, G.; Kumar, A.; Cassetta, M.; Lutterotti, L.; Borovin, E.; Orberger, B.; Simon, P.; Hehlen, B.; Le Guen, M.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335746
Citazioni:
Raman Open Database: first interconnected Raman–X-ray diffraction open-access resource for material identification / El Mendili, Y.; Vaitkus, A.; Merkys, A.; Grazulis, S.; Chateigner, D.; Mathevet, F.; Gascoin, S.; Petit, S.; Bardeau, J. -F.; Zanatta, M.; Secchi, M.; Mariotto, G.; Kumar, A.; Cassetta, M.; Lutterotti, L.; Borovin, E.; Orberger, B.; Simon, P.; Hehlen, B.; Le Guen, M.. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 0021-8898. - 52:3(2019), pp. 618-625. [10.1107/S1600576719004229]
Abstract:
Detailed crystallographic information provided by X-ray diffraction (XRD) is complementary to molecular information provided by Raman spectroscopy. Accordingly, the combined use of these techniques allows the identification of an unknown compound without ambiguity. However, a full combination of Ram...
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2019
Carbon nanotubes synthesis using siliceous breccia as a catalyst source
Anno: 2019
 Rivista: DIAMOND AND RELATED MATERIALS
Autori/autrici: Kumar, A.; Kostikov, Y.; Zanatta, M.; Soraru, G. D.; Orberger, B.; Nessim, G. D.; Mariotto, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335768
Citazioni:
Carbon nanotubes synthesis using siliceous breccia as a catalyst source / Kumar, A.; Kostikov, Y.; Zanatta, M.; Soraru, G. D.; Orberger, B.; Nessim, G. D.; Mariotto, G.. - In: DIAMOND AND RELATED MATERIALS. - ISSN 0925-9635. - 97:(2019), pp. 107433.1-107433.7. [10.1016/j.diamond.2019.05.018]
Abstract:
In this work, siliceous breccia, a natural rock powder composed essentially of SiO2 α-quartz, has been employed directly as a catalyst without any chemical treatment for the synthesis of carbon nanotubes (CNTs) via chemical vapor deposition (CVD). In addition to quartz, it contains dispersed micro-...
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2018
Mineralogical investigations using XRD, XRF, and Raman spectroscopy in a combined approach
Anno: 2018
 Rivista: JOURNAL OF RAMAN SPECTROSCOPY
Autori/autrici: Secchi, M.; Zanatta, M.; Borovin, E.; Bortolotti, M.; Kumar, A.; Giarola, M.; Sanson, A.; Orberger, B.; Daldosso, N.; Gialanella, S.; Mariotto, G.; Montagna, M.; Lutterotti, L.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335749
Citazioni:
Mineralogical investigations using XRD, XRF, and Raman spectroscopy in a combined approach / Secchi, M.; Zanatta, M.; Borovin, E.; Bortolotti, M.; Kumar, A.; Giarola, M.; Sanson, A.; Orberger, B.; Daldosso, N.; Gialanella, S.; Mariotto, G.; Montagna, M.; Lutterotti, L.. - In: JOURNAL OF RAMAN SPECTROSCOPY. - ISSN 0377-0486. - 49:6(2018), pp. 1023-1030. [10.1002/jrs.5386]
Abstract:
The identification of mineralogical phases in drill cores is one of the most challenging tasks in the mining activity in view of an efficient metal extraction. This process requires the analytical characterization of large volumes of material to obtain a complete set of data in a minimum of time. No...
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2018
Natural Laterite as a Catalyst Source for the Growth of Carbon Nanotubes and Nanospheres
Anno: 2018
 Rivista: ACS APPLIED NANO MATERIALS
Autori/autrici: Kumar, A.; Kostikov, Y.; Orberger, B.; Nessim, G. D.; Mariotto, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335752
Citazioni:
Natural Laterite as a Catalyst Source for the Growth of Carbon Nanotubes and Nanospheres / Kumar, A.; Kostikov, Y.; Orberger, B.; Nessim, G. D.; Mariotto, G.. - In: ACS APPLIED NANO MATERIALS. - ISSN 2574-0970. - 1:11(2018), pp. 6046-6054. [10.1021/acsanm.8b01117]
Abstract:
Carbon nanotubes (CNTs), the closest structure to ideal one-dimensional (1D) conductors, have stimulated substantial interest in the last decades for many applications in the field of nanotechnology. Unfortunately, the high cost of efficient metal catalysts limits the large-scale exploitation of car...
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2017
The effect of B-doping on the electrical conductivity of polymer-derived Si(B)OC ceramics
Anno: 2017
 Rivista: JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Autori/autrici: Soraru, G. D.; Kacha, G.; Campostrini, R.; Ponzoni, A.; Donarelli, M.; Kumar, A.; Mariotto, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335767
Citazioni:
The effect of B-doping on the electrical conductivity of polymer-derived Si(B)OC ceramics / Soraru, G. D.; Kacha, G.; Campostrini, R.; Ponzoni, A.; Donarelli, M.; Kumar, A.; Mariotto, G.. - In: JOURNAL OF THE AMERICAN CERAMIC SOCIETY. - ISSN 0002-7820. - 100:10(2017), pp. 4611-4621. [10.1111/jace.14986]
Abstract:
In this work the room temperature electrical conductivity of Si(B)OC glasses made via polymer pyrolysis at 1200°C and 1400°C (maximum temperature) and having different amount of boron was measured. When B content is increased from zero (pure SiOC glass) up to B/Si=0.5 the electrical conductivity i...
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2017
SnS thin film solar cells: Perspectives and limitations
Anno: 2017
 Rivista: COATINGS
Autori/autrici: Di Mare, S.; Menossi, D.; Salavei, A.; Artegiani, E.; Piccinelli, F.; Kumar, A.; Mariotto, G.; Romeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335740
Citazioni:
SnS thin film solar cells: Perspectives and limitations / Di Mare, S.; Menossi, D.; Salavei, A.; Artegiani, E.; Piccinelli, F.; Kumar, A.; Mariotto, G.; Romeo, A.. - In: COATINGS. - ISSN 2079-6412. - 7:2(2017), pp. 34.34-34.45. [10.3390/coatings7020034]
Abstract:
Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For...
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2017
Combined mineralogy and chemistry on drill cores: challenging for on-line-real-time analyses
Anno: 2017
 Autori/autrici: Duée, Cedric; Maubec, Nicolas; Laperche, Valérie; Capar, Laure; Bourguignon, Anne; Bourrat, Xavier; El Mendili, Yassine; Chateigner, Daniel; Gascoin, Stéphanie; Mariotto, Gino; Giarola, Marco; Kumar, Arun; Daldosso, Nicola; Zanatta, Marco; Speghini, Adolfo; Sanson, Andrea; Lutterotti, Luca; Borovin, Evgeny; Bortolotti, Mauro; Secchi, Maria; Montagna, Maurizio; Orberger, Beate; Le Guen, Monique; Salaün, Anne; Rodriguez, C.; Trotet, F.; Kadar, M.; Devaux, K.; Pillière, Henry; Lefèvre, Thomas; Eijkelkamp, Fons; Nolte, Harm; Koert, Pieter; Grazulis, Saulius
Lingua: ENG
Classificazione IRIS: 2.1 Contributo in volume (Capitolo o Saggio)
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335772
Citazioni:
Combined mineralogy and chemistry on drill cores: challenging for on-line-real-time analyses / Duée, Cedric; Maubec, Nicolas; Laperche, Valérie; Capar, Laure; Bourguignon, Anne; Bourrat, Xavier; El Mendili, Yassine; Chateigner, Daniel; Gascoin, Stéphanie; Mariotto, Gino; Giarola, Marco; Kumar, Arun; Daldosso, Nicola; Zanatta, Marco; Speghini, Adolfo; Sanson, Andrea; Lutterotti, Luca; Borovin, Evgeny; Bortolotti, Mauro; Secchi, Maria; Montagna, Maurizio; Orberger, Beate; Le Guen, Monique; Salaün, Anne; Rodriguez, C.; Trotet, F.; Kadar, M.; Devaux, K.; Pillière, Henry; Lefèvre, Thomas; Eijkelkamp, Fons; Nolte, Harm; Koert, Pieter; Grazulis, Saulius. - 3:(2017), pp. 1541-1544.
2016
Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition
Anno: 2016
 Rivista: SOLAR ENERGY
Autori/autrici: Salavei, A.; Menossi, D.; Piccinelli, F.; Kumar, A.; Mariotto, G.; Barbato, M.; Meneghini, M.; Meneghesso, G.; Di Mare, S.; Artegiani, E.; Romeo, A.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335754
Citazioni:
Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition / Salavei, A.; Menossi, D.; Piccinelli, F.; Kumar, A.; Mariotto, G.; Barbato, M.; Meneghini, M.; Meneghesso, G.; Di Mare, S.; Artegiani, E.; Romeo, A.. - In: SOLAR ENERGY. - ISSN 0038-092X. - 139:(2016), pp. 13-18. [10.1016/j.solener.2016.09.004]
Abstract:
In this paper we present for the first time flexible CdTe solar cells deposited on ultra-thin glass using a low temperature process and compared the results to CdTe cells deposited on polyimides. The effects of the different substrates on the morphology and crystal structure of CdTe absorber layers,...
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2016
A study of SnS recrystallization by post deposition treatment
Anno: 2016
 Autori/autrici: Di Mare, S.; Salavei, A.; Menossi, D.; Piccinelli, F.; Bernardi, P.; Artegiani, E.; Kumar, A.; Mariotto, G.; Romeo, A.
Lingua: ENG
Classificazione IRIS: 4.1 Contributo in Atti di convegno
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335777
Citazioni:
A study of SnS recrystallization by post deposition treatment / Di Mare, S.; Salavei, A.; Menossi, D.; Piccinelli, F.; Bernardi, P.; Artegiani, E.; Kumar, A.; Mariotto, G.; Romeo, A.. - 2016-November:(2016), pp. 7749627.431-7749627.434. (Intervento presentato al convegno 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 tenutosi a Portland, USA nel 5 - 10 June 2016) [10.1109/PVSC.2016.7749627].
Abstract:
Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl2. A recry...
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2015
Sunlight-activated Eu2+/Dy3+ doped SrAl2O4 water resistant phosphorescent layer for optical displays and defence applications
Anno: 2015
 Rivista: NEW JOURNAL OF CHEMISTRY
Autori/autrici: Kumar, Arun; Kedawat, Garima; Kumar, Pawan; Dwivedi, Jaya; Kumar Gupta, Bipin
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335733
Citazioni:
Sunlight-activated Eu2+/Dy3+ doped SrAl2O4 water resistant phosphorescent layer for optical displays and defence applications / Kumar, Arun; Kedawat, Garima; Kumar, Pawan; Dwivedi, Jaya; Kumar Gupta, Bipin. - In: NEW JOURNAL OF CHEMISTRY. - ISSN 1369-9261. - (2015). [10.1039/C4NJ02333A]
2015
Probing on green long persistent Eu2+/Dy3+ doped Sr3SiAl4O11 emerging phosphor for security applications
Anno: 2015
 Rivista: JOURNAL OF APPLIED PHYSICS
Autori/autrici: Gupta, B. K.; Kumar, A.; Kumar, P.; Dwivedi, J.; Pandey, G. N.; Kedawat, G.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335741
Citazioni:
Probing on green long persistent Eu2+/Dy3+ doped Sr3SiAl4O11 emerging phosphor for security applications / Gupta, B. K.; Kumar, A.; Kumar, P.; Dwivedi, J.; Pandey, G. N.; Kedawat, G.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 117:24(2015), pp. 243104.2431041-243104.2431049. [10.1063/1.4922983]
Abstract:
Herein, a novel green emitting long-persistent Sr3SiAl4O11:Eu2+/Dy3+ phosphor was synthesized in a single phase form using facile solid state reaction method under the reducing atmosphere of 10% H2 and 90% N2. The resulting phosphor exhibits hyper-sensitive strong broad green emission, peaking at 51...
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2014
A commercial approach for the fabrication of bulk and nano phosphors converted into highly efficient white LEDs
Anno: 2014
 Rivista: RSC ADVANCES
Autori/autrici: Dwivedi, J.; Kumar, P.; Kumar, A.; Sudama, ; Singh, V. N.; Singh, B. P.; Dhawan, S. K.; Shanker, V.; Gupta, B. K.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335748
Citazioni:
A commercial approach for the fabrication of bulk and nano phosphors converted into highly efficient white LEDs / Dwivedi, J.; Kumar, P.; Kumar, A.; Sudama, ; Singh, V. N.; Singh, B. P.; Dhawan, S. K.; Shanker, V.; Gupta, B. K.. - In: RSC ADVANCES. - ISSN 2046-2069. - 4:98(2014), pp. 54936-54947. [10.1039/c4ra11318g]
Abstract:
Herein, we report a strategy to synthesize a highly efficient yellow light emitting Y3-xAl5O12:Cex (x = 0.03 to 0.3) based bulk as well as nano (rod-shaped) phosphors, which are the main component of solid state white light-emitting diodes (WLEDs). The as-synthesized phosphors were well characterize...
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2014
Fabrication of a flexible UV band-pass filter using surface plasmon metal-polymer nanocomposite films for promising laser applications
Anno: 2014
 Rivista: ACS APPLIED MATERIALS & INTERFACES
Autori/autrici: Kedawat, G.; Gupta, B. K.; Kumar, P.; Dwivedi, J.; Kumar, A.; Agrawal, N. K.; Kumar, S. S.; Vijay, Y. K.
Lingua: ENG
Classificazione IRIS: 1.1 Articolo in rivista
Scheda completa IRIS: https://iris.univpm.it/handle/11566/335753
Citazioni:
Fabrication of a flexible UV band-pass filter using surface plasmon metal-polymer nanocomposite films for promising laser applications / Kedawat, G.; Gupta, B. K.; Kumar, P.; Dwivedi, J.; Kumar, A.; Agrawal, N. K.; Kumar, S. S.; Vijay, Y. K.. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 6:11(2014), pp. 8407-8414. [10.1021/am501307h]
Abstract:
We introduce a strategy for the fabrication of silver/polycarbonate (Ag/PC) nanocomposite flexible films of (20 ± 0.01) μm thickness with different filling factor of surface plasmon metal using customized solution cast-thermal evaporation method. Structural characterizations confirmed the good cry...
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